A compact, highly integrated front-end RFIC (Radio Frequency Integrated Circuit) intended for range extension of Bluetooth® Smart, 802.15.4 ZigBee™/ Thread, ANT+, and proprietary ISM wireless systems in the 863-870MHz / 902-928MHz or 2.4GHz band.

From Basic PA with integrated with filter networks plus input /output matching circuitry to Single-Chip that combines: Power Amplifier, Low Noise Amplifier, Bypass,  Transmit /  Receive  Switch, 4-Port Antenna Switch,  Directional  Power  Detector and Matching Network.

Highly accurate 50Ω digital step attenuator model providing adjustable attenuation from 0 up to 31.75dB in 0.5 or 0.25 dB steps.

The control interface supports a 6bit or 7bit serial interface with 3-bit addressable function and latched parallel interface. It is also supporting a broad operating frequency range from 1MHz to 6.0GHZ or 8.0 GHz. The device features a safe state transitions with no negative/positive Glitch technology optimized for excellent step accuracy. The design is bi-directional; Therefore, the RF input and output are interchangeable and in addition this series does not require blocking capacitors to minimize PCB space.

Main Applications:

• 5G/4G+/4G/3G Cellular Base station/Repeater
• Digital Pre-Distortion
• DAS
• Remote Radio Heads
• NFC Infrastructure
• Test Equipment and sensors
• Military \ defense
• Cable Infrastructure
• General purpose Wireless

Main Features:

• 6-bit or 7-bit Serial & Parallel Interface
• Up to 31.75 dB Control Range 0.5/0.25 dB step
• Support addressable Function (Addr0-Addr7)
• Glitch-safe attenuation state transitions
• 2.7 V to 5.5 V supply
• 1.8 V or 3.3 V control logic
• Low Insertion Loss with Ultra-linearity
• Input 0.1dB Compression (P0.1dB) up to 32dBm @ 3.5GHz, ATT=0dB
• Versatile Programming modes
• Stable Integral Non-Linearity over temperature
• Low Current Consumption 200 μA typical
• -40 °C to +105 °C operating temperature
• ESD rating: Class1C (1KV HBM)
• 6 bit – 4mm² QFN RoHS2-package
• 7 bit – 5mm² QFN RoHS2-package

Low Insertion Loss Dividers designed for Cellular & GSM band. Fully passivated with enhanced performance and high reliability. Available in RoHS-compliant SMT packages. Can be used without back side ground soldering.

• BW : 700 – 2900 Mhz
• Insertion Loss : 0.3 – 0.7 dBm
• PKG : SOT-26 , SOIC8

Our extensive line of RF Mixers covers up to 65 GHz. Optimized to support your requirements for superior isolation, spurious and phase characteristics with overlapping IF and LO bands, and broad flat conversion loss at RF/LO frequencies above 2 GHz.

• Hybrid Mixers – offer extremely high isolations, flat conversion loss across a broad bandwidth and an extremely compact package
• High linearity Mixers – ideal choice where intermodulation distortion, P3 or two tones and input power compression are system limitations.  Also available with integrated LO amplifier to provide the highest possible IP3, 1-dB compression and spurious prevention at frequencies below 10 GHz.
• Balanced Mixers – General purpose mixers for most applications. Variety of bandwidth, isolations, and package options.
• Special function mixers – IQ Mixers, Image Reject Mixers and Single Sideband Mixers.

BeRex’s wide band SPDT’s (single pole double throw) RF switches are ideal for high power, high isolation and low loss / fast switching applications.
Supporting a broad array of communication systems from 5MHz to 6GHz including Cellular & GSM, high power WLAN 802.11 a/b/g/n/ac/ax, DOCSIS 3.0/3.1 and more.

BeRex’s switches offer RoHS-compliant package, ESD protection circuits at all pins and high linearity performance over all temperature range (-40 to +105°C).

High performance InGaP/GaAs HBT MMIC amplifier family is internally matched to 75 Ohms and uses a patented temperature compensation circuit to provide stable current over operation temperature range without the need for external components.

Designed for high linearity gain block applications that require excellent gain flatness over voltage protection without additional external components.  It is ideal for infrastructure projects for 75ohm CATV and satellite applications.

BCL015-70 is a GaAs Super Low Noise Enhancement Mode pHEMT in surface-mountable package.

It’s size recessed gate architecture provides low noise and high associated gain over a broad frequency range of 1000 MHz to 26 GHz .

Main Features :

• 70 mil. surface-mountable ceramic package
• 0.46 dB typical noise figure @12 GHz
• 11.5 dB typical associated gain @12 GHz
• 0.15 X 150 Micron Recessed Gate
• RoHS2-compliant/lead-free
• Single Positive Voltage Operation