MMIC Devices

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Our MMIC (Monolithic microwave integrated circuit) devices offering includes ultra-wide band (UWB) power amplifiers (PA), low noise amplifier (LNA), mixers and gain blocks, drive amps, IF ICs, dividers, discrete devices and switches and other RF ICs, available in variety of package sizes or Bare Die to fit your requirements.

 

Our MMIC products offer substantial advantages such as ESD 4,000 volt, MSL 1, high quality and uniformity, enhanced band width 10MHz to 65GHz, 100% lead-free green products (RoHS compliant), higher performance, temperature compensated bias circuit, friendly packaging, MTBF over 100 years and more.

 

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High-Frequency ICs For Radar (up to 120GHz)

High-frequency ICs for various uses. Receivers, transceivers and LNAs (Low Noise Amplifiers) designed mainly for use in ISM bands 24 GHz, 60 GHz and 120 GHz and in some cases offer particularly high bandwidths. In some ICs, the antennas can be integrated in the package or even on the silicon chip.

Custom ASIC design is also available (including small batches and up to 300GHz).

Main Applications:

  • RADAR – Presence and motion detection / Detection of materials including analysis and quality control
  • SMART CITY – Parking management /Automotive in-chassis / Roadway inspections /etc.
  • SMART FACTORY – Material testing and measurement, Level indictors /etc.
  • BIO SENSING – Positioning / Detection of inactivity / High-frequency sensors /etc.
  • ROBOTICS – Environment and Obstacle detection / Distance measurement and positioning /etc.
  • SMART AGRICULTURE AND FORESTRY – Drones / UAVs for inspections / Precision farming /etc.

Smart Front End RFIC

A compact, highly integrated front-end RFIC (Radio Frequency Integrated Circuit) intended for range extension of Bluetooth® Smart, 802.15.4 ZigBee™/ Thread, ANT+, and proprietary ISM wireless systems in the 863-870MHz / 902-928MHz or 2.4GHz band.


From Basic PA with integrated with filter networks plus input /output matching circuitry to Single-Chip that combines: Power Amplifier, Low Noise Amplifier, Bypass,  Transmit /  Receive  Switch, 4-Port Antenna Switch,  Directional  Power  Detector and Matching Network.

Datasheet

Wideband Low Noise Amplifier

High performance LNA based on GaAs pHEMT and packaged in a RoHS-compliant SMT packages. Ideal for applications demanding low noise, high linearity and high OIP3 at wideband frequencies. Optimized for extreme efficiency, benefits the system size, overall performance and lower your cost.

All devices are 100% RF/DC tested and most are classified as HBM ESDS Class 1B.

  • BW : From 5MHz  up to 8GHz
  • P1 : 16.5 – 22 dBm
  • NF : as low as  0.88 dB
  • Low power consumption
  • RoHS2 PKG : SOT-89 , SOT-363 , QFN \ DFN
Datasheet

Wide Band Gain Block

High performance InGaP HBT MMIC amplifier, internally matched to 50 Ohms and uses a patented temperature compensation circuit to provide stable current over the operating temperature range. The components are designed for high linearity gain block applications that require excellent gain flatness and over voltage protection without additional external components. Available in a RoHS-compliant SOT-89 SMT package.

  • BW : 5 – 4000 Mhz
  • P1 : 11 – 20 dBm
  • NF : 2.0 – 8.0 dB
  • PKG : SOT-89
Datasheet

Digital Step Attenuators

Highly accurate 50Ω digital step attenuator model providing adjustable attenuation from 0 up to 31.75dB in 0.5 or 0.25 dB steps.

 

The control interface supports a 6bit or 7bit serial interface with 3-bit addressable function and latched parallel interface. It is also supporting a broad operating frequency range from 1MHz to 6.0GHZ or 8.0 GHz. The device features a safe state transitions with no negative/positive Glitch technology optimized for excellent step accuracy. The design is bi-directional; Therefore, the RF input and output are interchangeable and in addition this series does not require blocking capacitors to minimize PCB space.

Main Applications:

  • 5G/4G+/4G/3G Cellular Base station/Repeater
  • Digital Pre-Distortion
  • DAS
  • Remote Radio Heads
  • NFC Infrastructure
  • Test Equipment and sensors
  • Military \ defense
  • Cable Infrastructure
  • General purpose Wireless

Main Features:

  • 6-bit or 7-bit Serial & Parallel Interface
  • Up to 31.75 dB Control Range 0.5/0.25 dB step
  • Support addressable Function (Addr0-Addr7)
  • Glitch-safe attenuation state transitions
  • 2.7 V to 5.5 V supply
  • 1.8 V or 3.3 V control logic
  • Low Insertion Loss with Ultra-linearity
  • Input 0.1dB Compression (P0.1dB) up to 32dBm @ 3.5GHz, ATT=0dB
  • Versatile Programming modes
  • Stable Integral Non-Linearity over temperature
  • Low Current Consumption 200 μA typical
  • -40 °C to +105 °C operating temperature
  • ESD rating: Class1C (1KV HBM)
  • 6 bit – 4mm² QFN RoHS2-package
  • 7 bit – 5mm² QFN RoHS2-package
Datasheet

High Power Amplifier

High power, high dynamic range amplifiers in a low-cost SMT RoHS-compliant package (SOIC-8), incorporating reliable hetero-junction-bipolar-transistor (HBT) devices fabricated with InGaP GaAs technology.

Ideal for high linearity applications and features high OIP3 and power with low consumption current.  Requires a few external matching components such as a DC blocking capacitor on the in/Output pin, a bypass capacitor and an RF choke for the out port. All devices are 100% RF/DC tested.

  • BW : 500 – 4000 Mhz
  • P1 : 28 – 34 dBm
  • NF : 5.0 – 8.5 dB
  • PKG : SOIC8 , QFN
Datasheet

Dividers

Low Insertion Loss Dividers designed for Cellular & GSM band. Fully passivated with enhanced performance and high reliability. Available in RoHS-compliant SMT packages. Can be used without back side ground soldering.

  • BW : 700 – 2900 Mhz
  • Insertion Loss : 0.3 – 0.7 dBm
  • PKG : SOT-26 , SOIC8
Datasheet

RF Mixers

Our extensive line of RF Mixers covers up to 65 GHz. Optimized to support your requirements for superior isolation, spurious and phase characteristics with overlapping IF and LO bands, and broad flat conversion loss at RF/LO frequencies above 2 GHz.

  • Hybrid Mixers – offer extremely high isolations, flat conversion loss across a broad bandwidth and an extremely compact package
  • High linearity Mixers – ideal choice where intermodulation distortion, P3 or two tones and input power compression are system limitations.  Also available with integrated LO amplifier to provide the highest possible IP3, 1-dB compression and spurious prevention at frequencies below 10 GHz.
  • Balanced Mixers – General purpose mixers for most applications. Variety of bandwidth, isolations, and package options.
  • Special function mixers – IQ Mixers, Image Reject Mixers and Single Sideband Mixers.
Datasheet
BVA303

Digital Variable Gain Amplifier

Digitally controlled variable gain amplifier (DVGA) featuring high linearity, frequency range 5-4000 MHz, internally matched to 50 Ohms as well as a serial output port that enables cascading it with other serial controlled devices.

Offering an integrated high performance digital step attenuator with a high linearity broadband gain block, small package (4x4mm QFN) and operating at VDD 3V voltage. Ideal for 3G/4G wireless infrastructure and other high-performance RF applications.

 

Datasheet
sot-363

3-3.3Vdc Supply Amplifier

Designed to run directly from a 3-3.3V supply and available in high SiGe or InGaP/ GaAs HBT MMIC’s, RoHS-compliant SOT-363 or SOT-89 package. Offering high linearity, internally matched to 50 Ohms and uses a patented temperature compensation circuit to provide stable current over the operating temperature range with no external components.

Ideal for Cellular, PCS, GSM, UMTS, WCDMA, Base station Infrastructure/RFID and Commercial/Industrial/Military wireless system applications

 

Datasheet
Wide Band RF Switch

Wide Band RF Switch

BeRex’s wide band SPDT’s (single pole double throw) RF switches are ideal for high power, high isolation and low loss / fast switching applications.
Supporting a broad array of communication systems from 5MHz to 6GHz including Cellular & GSM, high power WLAN 802.11 a/b/g/n/ac/ax, DOCSIS 3.0/3.1 and more.

BeRex’s switches offer RoHS-compliant package, ESD protection circuits at all pins and high linearity performance over all temperature range (-40 to +105°C).

Datasheet

75Ω HBT Amplifiers

High performance InGaP/GaAs HBT MMIC amplifier family is internally matched to 75 Ohms and uses a patented temperature compensation circuit to provide stable current over operation temperature range without the need for external components.

 

Designed for high linearity gain block applications that require excellent gain flatness over voltage protection without additional external components.  It is ideal for infrastructure projects for 75ohm CATV and satellite applications.

Datasheet

Super Low Noise PHEMT

BCL015-70 is a GaAs Super Low Noise Enhancement Mode pHEMT in surface-mountable package.

 

It’s size recessed gate architecture provides low noise and high associated gain over a broad frequency range of 1000 MHz to 26 GHz .

Main Features :

  • 70 mil. surface-mountable ceramic package
  • 0.46 dB typical noise figure @12 GHz
  • 11.5 dB typical associated gain @12 GHz
  • 0.15 X 150 Micron Recessed Gate
  • RoHS2-compliant/lead-free
  • Single Positive Voltage Operation
Datasheet

RFIC and Multifunctional Chips

Our RFIC and Multifunctional Chips integrate various components including Power Amplifier, Low Noise Amplifier, Transmit / Receive Switch, Integrated Harmonic Filters and more to a Single-Chip solution.

From a basic Multi-function Chip that integrates a driver, phase shifter and attenuator to a high-power front end or a wideband Multi-function Transceiver chip. Our solutions are optimized for extreme efficiency, benefit the system size, overall performance and lower your cost and can be integrated in a variety of applications.

Datasheet

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