MMIC Devices

Our MMIC (Monolithic microwave integrated circuit) Devices offering includes gain blocks, local drive amps, IF ICs, power amplifiers, discrete devices, switches, mixers, LNAs and other RF integrated circuits.

BeRex is a reputable RF components manufacturer, designer and marketer focusing on and dedicated to patentable RF technologies and products for the wireless industry.

BeRex offers such advantages as ESD 4,000 volt, MSL 1, product quality uniformity, enhanced band width 10 to 4000 MHz, 100% lead-free green products(RoHS compliant), less external parts, higher performance, 100% RF/DC screen, temperature compensated bias circuit, friendly packaging, MTBF over 100 years and more.


Quotation Request


Wideband Low Noise Amplifier

BeRex high performance LNA based on GaAs material with E-pHEMT pro-cess, packaged in a RoHS-compliant with surface mount packages. It is designed for use where low noise and high linearity are  required and features low noise and high OIP3 at wideband frequency. It requires a few external matching components. All devices are 100% RF/DC tested and classified as HBM ESDS Class 1B.

  • BW : 5 – 4000 Mhz
  • P1 : 16.5 – 22 dBm
  • NF : 0.91 – 1.8 dB
  • PKG : SOT-89 , SOT-363

Wide Band Gain Block

BeRex  high performance InGaP HBT MMIC amplifier is internally matched to 50 Ohms and uses a patented temperature compensation circuit to provide stable cur-rent over the operating temperature range without the need for external components. The components are designed for high linearity gain block applications that require excellent gain flatness and over voltage protection without additional external components. It is pack-aged in a RoHS-compliant SOT-89 surface mount package.

  • BW : 5 – 4000 Mhz
  • P1 : 11 – 20 dBm
  • NF : 2.0 – 8.0 dB
  • PKG : SOT-89

High Power Amplifier

BeRex’s  high power and a high dynamic range amplifier in a low cost surface mount package(SOIC-8) with a RoHS-compliant, that incorporates reliable hetero-junction-bipolar-transistor (HBT) devices fabricated with InGaP GaAs technology.

Those devices are designed for use where high linearity is required and features high OIP3 and Power with low consumption current (350mA) and requires a few external matching components such as a DC blocking capacitors on the In/Output pin, a bypass capacitor and a RF choke for the out port. All devices are 100% RF/DC tested.

  • BW : 500 – 4000 Mhz
  • P1 : 28 – 34 dBm
  • NF : 5.0 – 8.5 dB
  • PKG : SOIC8 , QFN


BeRex’s Dividers designed for Cellular & GSM band with low Insertion Loss and Isolation. Those chips are fully passivated for enhanced performance and reliability and packaged in RoHS-compliant with SOIC-8 surface mount package.

It can be used without back side ground soldering. (This may degrade the performance at the high frequency edge.)

  • BW : 700 – 2900 Mhz
  • Insertion Loss : 0.3 – 0.7 dBm
  • PKG : SOT-26 , SOIC8


  • Mixers
  • Digital Variable Gain Amplifier
  • 3.0~3.3V Supply Amplifier